The lattice parameter of Lithium Dioxogallate (LiGaO₂) and Lithium Aluminium Oxide (γ) (LiAlO₂) crystal can match with the Gallium Nitride film very well. The mismatch coefficients are 0.2% and 1.4% only for LiGaO₂ and LiAlO₂, much smaller than that of the common used substrates such as <0001> sapphire (14%), <100> MgO (3%), <0001> SiC (3.5%). The Gallium Nitride film is a very important material for blue, violet, UV and white LED. A substrate material that matches the film to be grown well is very important to get a nice GaN epitaxial film.
　

Formula	LiAlO2
Crystal structure	422 tetragonal
Cell parameter	a=5.169 c=6.268
Melting point (°K)	1973
Density (g/cm3)	2.615
Hardness (Mohs)	6.5
Growth Method	Czockralski

Standard Size: Ф20, 20x20,10x10,10x5,10x3mm…or customer design
Thickness: 0.5mm,1.0mm.
Thickness tolerance: ±0.02mm or 0.005mm for special order;
Polish: one side or two sides
Orientation: (100) (110) (111)
Orientation accuracy: ±0.5°
Edge Orientation accuracy: 2° or 1° for special order
Cut with special tilt angle : available (tilt angle:1°－45°)
Micro Roughness Ra: ≤5Å (5μm×5μm)