Sapphire is an excellent multi-functional material, it has high thermal conductivity, hardness, IR transmission, high stability in different chemical atmosphere and is able to stand high temperature, so it is widely used in many areas like science, technology, industry and defense. It is an important substrate material for blue, violet, UV and white LED and LD as well as for high Tc superconductive films. Except Y-system, La-system superconductive films, the new superconductive material, MgB film, can also be grown on it while most substrates will be chemical damaged during the film growth process by the chemical atmosphere.

Crystal structure	3 m
Cell parameter	a=4.758Å c=12.983Å
Melting Point	2325°K
Density	3.99g/cm3
Specific Heat	0.757J/g∙k
Thermal conductivity	35.1//c  33.0⊥c  W/m∙k
Theramal expansion (10-6k-1 )	4.3//a, 3.9//c (294°K) 9.2//a, 9.3//c (757°K)
Dielectric constant (εr)	9.4//a, 11.5//c (295°K) 9.3//a, 11.3//c (80°K)
Dielectric loss (tgδ)	<1x10-6(80°K) Microwave
Hardness (Mohs)	9
Growth Method	Czockralski

Standard Size: Ф2″,Ф1″, 20x20, 10x10, 10x5, 10x3mm…or customer design
Thickness: 0.5mm, 1.0mm.
Thickness tolerance: ±0.02mm or 0.005mm for special order;
Polish: one or two sides
Orientation: <10-10> , <1-102> , <11-20>, <0001>
Orientation accuracy: ±0.5°
Edge Orientation accuracy: 2°(or 1°for special order)
Cut with special tilt angle : available(tilt angle:1°-45°)
Micro roughness Ra: ≤5Å(5μm×5μm)